High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society

Hsiang-Chun Wang¹  Hsien-Chin Chiu¹  Bo-Hong Li¹  Hsuan-Ling Kao¹  Yi-Sheng Chang¹  Chih-Wei Hu²  Rong Xuan² 

[1] Department of Electronic Engineering, Chang-Gung University, Taoyuan, Taiwan;GaN Compound Semiconductor Technology Development, Episil-Precision Inc., Hsinchu, Taiwan;

关键词: Gallium nitride (GaN);    high electron mobility transistor (HEMT);    normally-off;    pulse measurement;   

DOI  :  10.1109/JEDS.2018.2789908

来源: DOAJ

【 摘 要 】

In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N barrier layers is proposed. Compared to the standard (STD) p-GaN/AlGaN/GaN HEMT structure, the composite barriers (CB) with AlN etchstop layer can effectively improve the uniformity of the device threshold voltage (V_TH) and reduce the leakage current. The CB p-GaN gate HEMT achieved a V_TH of 1.7 ± 0.06 V; this value was 2.1 ± 0.2 V for STD HEMT. In addition, the off-state drain leakage current was suppressed one order of magnitude by adopting a composite barrier design.

【 授权许可】

Unknown