Characterization of GaN MOS-HEMT trap-related effects for power switching applications

Gallium nitride (GaN);Metal-Oxide-Semiconductor (MOS);High-Electron-Mobility Transistor (HEMT);Reliability

Zhang, Dabin

关键词: Gallium nitride (GaN);    Metal-Oxide-Semiconductor (MOS);    High-Electron-Mobility Transistor (HEMT);    Reliability;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/78692/ZHANG-THESIS-2015.pdf?sequence=1&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic, temperature dependency, breakdown behavior and trap-related effects, were studied. Multiple customized measurement setups and configurations, including hardware and software, are discussed. We have estimated trap distribution using the capacitance and the conductance method. Pulse measurements and stress tests with various bias conditions were used to understand trap-related degradations. Performance and trap-related comparisons between our device and the literature are also included.