High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer

Nanomaterials

Ki-Sik Im¹  Young-Min Hwang¹  Jae-Seung Roh²  Jin-Seok Choi²  Sung-Jin An²  Siva Pratap Reddy Mallem³  Jae-Hoon Lee⁴ 

[1] Advanced Material Research Center, Kumoh National Institute of Technology, Gumi 39177, Korea;Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology, Gumi 39177, Korea;School of Materials Science and Engineering, Kyungpook National University, Daegu 41566, Korea;Yield Enhancement Team, Foundry, Samsung Electronics Company Ltd., Pyeongtaek 17789, Korea;

关键词: AlGaN/GaN HEMT;    in situ cap layer;    low-frequency noise;    pulse measurement;   

DOI  :  10.3390/nano12040643

来源: DOAJ

【 摘 要 】

We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. The pulse characteristics and noise behaviors for two devices with in situ cap layers are much superior to those of the reference device without a cap layer, which means that the in situ cap layer effectively passivates the AlGaN surface. On the other hand, the device with an in situ SiCN cap layer showed the excellent device characteristics and noise performances compared to the other devices because of the reduced positive ionic charges and enhanced surface morphology caused by carbon (C) surfactant atoms during the growth of the SiCN cap layer. These results indicate that the AlGaN/GaN HEMT with the in situ SiCN cap layer is very promising for the next high-power device by replacing the conventional HEMT.

【 授权许可】

Unknown