Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering

Yueh Chin Lin¹  Kuan Ning Huang²  Chieh Ying Wu²  Edward Yi Chang²  Jing Neng Yao³  Jin Hwa Lee³  Chia Chieh Hsu⁴  Chao Hsin Chien⁵ 

[1] Corresponding author.;Department of Electronics Engineering, National Chiao-Tung University (NCTU), 1001 Ta Hsueh Road, Hsinchu, 30010, Taiwan, R.O.C.;Department of Materials Science and Engineering, National Chiao-Tung University (NCTU), 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, R.O.C.;Institute of Lighting and Energy Photonics, National Chiao-Tung University (NCTU), 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, R.O.C.;International College of Semiconductor Technology, National Chiao-Tung University (NCTU), 1001 Ta Hsueh Road, Hsinchu 30010, Taiwan, R.O.C.;

关键词: Tri-gate structure;    AlGaN/GaN HEMT;    High-k dielectric oxide;    HfO2;    Tri-gate MOS-HEMT;    Subthreshold swing;   

DOI  :  

来源: DOAJ

【 摘 要 】

In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV/decade, low off-state drain leakage current (Ioff) of 7 nA/mm, and On/Off ratio up to 7.6 × 107. Furthermore, we combined the tri-gate structure and metal oxide semiconductor (MOS) structure. The tri-gate MOS-HEMT with high-k dielectric oxide HfO2 was fabricated. The good interface between HfO2 and AlGaN and strain-induce polarization increase the carrier concentration. Compared to the tri-gate HEMT, the increased maximum drain current, higher On/Off ratio and better breakdown voltage is demonstrated by implanted the high k dielectric HfO2. The improved electrical performance of tri-gate MOS-HEMT shows potential for next generation power application.

【 授权许可】

Unknown