The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT

IEICE Electronics Express

Bin Hou¹  Zuochen Shi²  Xiaohua Ma¹  Minhan Mi²  Meng Zhang¹  Yunlong He²  Peixian Li¹  Yue Hao² 

[1] School of Advanced Materials and Nanotechnology, Xidian University;Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: GaN MIS-HEMT;    normally-off;    interface trap state;   

DOI  :  10.1587/elex.12.20150943

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(16)In this letter, a normally-off AlGaN/GaN MIS-HEMT using fluorinated gate dielectric was presented. The fluorine ions were injected into the Al2O3 gate dielectric to obtain positive threshold voltage (Vth) as well as avoiding the plasma induced to the GaN channel layer. Moreover the maximum transconductance of fluorinated gate MIS-HEMT has been improved compared with the non-treated MIS-HEMT. Furthermore, the fluorine ions injected into the Al2O3 gate dielectric could decrease the trap states density (DT) and time constant (τT) at the Al2O3/GaN interface. The normally-off MIS-HEMT showed a very high drain current of 507 mA/mm and Vth of 0.6 V.

【 授权许可】

Unknown