Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE Journal of the Electron Devices Society

Caitlin Chapin¹  Saleh Kargarrazi¹  Debbie G. Senesky¹  Peter F. Satterthwaite²  Scott William Blankenberg³  Ananth Saran Yalamarthy⁴ 

[1] Department of Aeronautics and Astronautics, Stanford University, Stanford, CA, USA;Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA;Department of Electrical Engineering, Stanford University, Stanford, CA, USA;Department of Mechanical Engineering, Stanford University, Stanford, CA, USA;

关键词: Gallium nitride (GaN);    high electron mobility transistor (HEMT);    high-temperature electronics;   

DOI  :  10.1109/JEDS.2019.2937008

来源: DOAJ

【 摘 要 】

Extreme environments such as the Venus atmosphere are among the emerging applications that demand electronics that can withstand high-temperature oxidizing conditions. While wide-bandgap technologies for integrated electronics have been developed so far, they either suffer from gate oxide and threshold voltage (V_th) degradation over temperature, large power supply requirements, or intrinsic base current. In this letter, AlGaN/GaN high electron mobility transistors (HEMTs) are suggested as an alternative platform for integrated sensors and analog circuits in extreme environments in oxidizing air atmosphere over a wide temperature range from 22°C to 400°C. An optimal biasing region, with a peak of transconductance (g_m,peak) at -2.3 V with a negligible shift over the temperature range was observed. Moreover, remarkably low V_th variation of 0.9% was observed, enabling the design of analog circuits that can operate over the entire temperature range. Finally, the operation of the devices at 400°C and 500°C over 25 hours was experimentally studied, demonstrating the stability of the DC characteristics after the 5 hours of burn-in, at 400°C.

【 授权许可】

Unknown