Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences

Zirui Wang¹  Shengji Wang¹  Zhenwei Zhang¹  Chao Chen¹  Zeheng Wang²  Yuanzhe Yao² 

[1] School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China;School of Information and Software Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China;

关键词: GaN;    HEMT;    ultra-thin barrier;    local charge compensation trench;   

DOI  :  10.3390/app9153054

来源: DOAJ

【 摘 要 】

In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized. Because the negative plasma-etching process, as well as the relaxing lattice during the process would introduce equivalent negative charges into the under-LCCT region, the electron will be partially squeezed out from this area. The electric field (E-field) around this region will therefore redistribute smoothly. Owing to this, the proposed LCCT-HEMT performs better in power applications. According to the simulation that is calibrated by the experimental data, the Baliga’s figure of merits (BFOM) of LCCT-HEMT is around two times higher than that of the conventional UTB-HEMT, hinting at the promising potential of proposed HEMT.

【 授权许可】

Unknown