Implementation of AlGaN/GaN based high electron mobility transistor on ferroelectric materials for multifunctional optoelectronic-acoustic-electronic applications

MBE;LiNbO3;Optoelectronics;HEMT;GaN

Lee, Kyoung-Keun ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: MBE;    LiNbO3;    Optoelectronics;    HEMT;    GaN;   

Others  :  https://smartech.gatech.edu/bitstream/1853/28209/1/lee_kyoung-keun_200905_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

This dissertation shows the properties of lithium niobate and lithium tantalate as a promising substrate for III-nitrides, addresses several problems of integrating compound semiconductor materials on LN and LT. It also suggests some solutions of the addressed problems, including furnace anneals at high temperature. While this furnace anneal improved surface smoothness and III-nitride film adhesion, it also caused the repolarization on the congruent LN (48.39 mole % of Li2O) samples. However, the repolarization was not developed in the stoichiometric LN (49.9 mole % of Li2O) samples during the identical thermal treatment. Also, the structural quality of GaN epitaxial layers showed slight improvement when grown on LT substrates over LN substrates. Conventional epitaxial growth technologies were adapted and modified to implement a successful AlGaN/GaN heterostructure on LN (LT). The heterostructure were analyzed to verify the electrical and material properties using several characterization techniques. Finally, it demonstrates AlGaN/GaN-based HEMT devices on ferroelectric materials that will allow the future development of the multifunctional electrical and optical applications.