Pathways for quantum dot optoelectronics fabrication using soft nanoimprint lithography

Molecular beam epitaxy;Optoelectronics;Quantum dots;Nanoimprint lithography;Nanofabrication and microfabrication;Reactive ion etching

Meneou, Kevin J.

关键词: Molecular beam epitaxy;    Optoelectronics;    Quantum dots;    Nanoimprint lithography;    Nanofabrication and microfabrication;    Reactive ion etching;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/16074/Meneou_Kevin.pdf?sequence=10&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Nanoimprint lithography is a low-cost, high-throughput alternative to traditionalserial nanolithography technologies. Here it is explored for application in the optoelectronicsarea. A variant of NIL using a flexible polymeric mold, termed “softNIL” is used to create and study quantum dot arrays according to two concepts. Inthe first concept, a dense array of nano-sized holes are etched into a blank GaAs substrate.When a thin InAs quantum dot (QD) layer is grown on top, the QDs nucleateonly at the locations of the holes, resulting in an array of site-controlled quantumdots. This concept shall be called “regrown QDs.” In the second concept, soft NIL isused to pattern an etch mask atop a sample consisting of an InP substrate topped byan InGaAs quantum well. Anisotropic dry etching is used to etch the sample downto the InP substrate to form an array of pillars, each containing a QD. For eachconcept, the morphology and optical performance are studied, and refinements arepursued to gain finer control over the morphology and brighter luminescence fromthe QDs. Finally, a plan is presented for incorporation of each concept into a doubleheterostructure layer design to yield a quantum dot laser.