科技报告详细信息
| Deep-Level Transient Spectroscopy in InGaAsN Lattice-Matched. | |
| Johnston, S. W. ; Ahrenkiel, R. K. ; Friedman, D. J. ; Kurtz, S. R. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Semiconductors; Gallium arsenides; Molecular beam epitaxy; Crystal lattices; Transients; | |
| RP-ID : DE200215000982 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
No abstract available.【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE200215000982.pdf | 377KB |  download |
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