GaNPAs Solar Cells Lattice-Matched to GaP.

Geisz, J. F. ; Friedman, D. J. ; Kurtz, S.

Technical Information Center Oak Ridge Tennessee

关键词: Solar cells;    Silica;    Crystal lattices;    Amorphous state;    Vapor phase epitaxy;   

RP-ID  :  DE200215000994

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

This conference paper describes the III-V semiconductors grown on silicon substrates are very attractive for lower-cost, high-efficiency multijunction solar cells, but lattice-mismatched alloys that result in high dislocation densities have been unable to achieve satisfactory performance. GaNxP1-x-yAsy is a direct-gap III-V alloy that can be grown lattice-matched to Si when y = 4.7x - 0.1. We propose the use of lattice-matched GaNPAs on silicon for high-efficiency multijunction solar cells. We have grown GaNxP1-x-yAsy on GaP (with a similar lattice constant to silicon) by metal-organic chemical vapor phase epitaxy with direct band-gaps in the range of 1.5 to 2.0 eV. We demonstrate the performance of single junction GaNxP1-x-yAsy solar cells grown on GaP substrates and discuss the prospects for the development of monolithic high efficiency multijunction solar cells based on silicon substrates.