Design and development of distributed feedback transistor lasers

Transistor laser;Distributed feedback;Nanoimprint lithography

Dixon, Forest P.

关键词: Transistor laser;    Distributed feedback;    Nanoimprint lithography;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/16840/Dixon_Forest.pdf?sequence=2&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

The transistor laser is a unique three-port device that operates simultaneously as atransistor and a laser. With quantum wells incorporated in the base regions ofheterojunction bipolar transistors, the transistor laser possesses advantageouscharacteristics of fast base spontaneous carrier lifetime, high differential optical gain, andelectrical-optical characteristics for direct “read-out” of its optical properties. Thesedevices have demonstrated many useful features such as high-speed optical transmissionwithout the limitations of resonance, non-linear mixing, frequency multiplication,negative resistance, and photon-assisted switching.To date, all of these devices operate as multi-mode lasers without any type ofwavelength selection or stabilizing mechanisms. Stable single-mode distributed feedbackdiode laser sources are important in many applications including spectroscopy, as pumpsources for amplifiers and solid-state lasers, for use in coherent communication systems,and now as TLs potentially for integrated optoelectronics. The subject of this work is toexpand the future applications of the transistor laser by demonstrating the theoreticalbackground, process development and device design necessary to achieve singlelongitudinal-mode operation in a three-port transistor laser. A third-order distributedfeedback surface grating is fabricated in the top emitter AlGaAs confining layers usingsoft photocurable nanoimprint lithography. The device produces continuous wave laseroperation with a peak wavelength of 959.75 nm and threshold current of 13 mA operatingat -70 °C. For devices with cleaved ends a side-mode suppression ratio greater than25 dB has been achieved.