Heterostructure polarization charge engineering for improved and novel III-V semiconductor devices

III-N;Polarization;GaN;InGaN;Solar cells;HEMT;Resonant tunneling;Tunneling;Multi-junction solar cells

Dickerson, Jeramy Ray ; Voss, Paul L. Electrical and Computer Engineering Ougazzaden, Abdallah Yoder, Paul D. Davis, Jeffrey A. Citrin, David S. Cherkaoui, Mohammed ; Voss, Paul L.

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: III-N;    Polarization;    GaN;    InGaN;    Solar cells;    HEMT;    Resonant tunneling;    Tunneling;    Multi-junction solar cells;   

Others  :  https://smartech.gatech.edu/bitstream/1853/51793/1/DICKERSON-DISSERTATION-2014.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Innovative electronic device concepts that use polarization charges to provide improved performance were validated. The strength of the electric fields created by polarization charges (PCs) was suggested to act as an additional design parameter in the creation of devices using III-nitride and other highly polar materials. Results indicated that polarization induced electric fields can replace conventional doping schemes to create the charge separation region of solar cells and would allow for a decoupling of device performance from doping requirements. Additionally, a model for calculating current through polarization induced tunnel diodes was proposed. The model was found to agree well with experimental current values. Several polarization induced tunnel junction (PTJ) designs were analyzed. A novel double-barrier PTJ was conceived that would allow for the creation of a multi-junction solar cell using strained InGaN absorption layers. Future research would include the fabrication of these devices and the inclusion of thermal effects in the model for calculating current through PTJs.