Photoluminescence characteristics of low indium composition InGaN thin films grown on sapphire by metalorganic chemical vapor deposition

THIN SOLID FILMS

卷:498

Article; Proceedings Paper

Feng, ZC ; Liu, W ; Chua, SJ ; Yu, JW ; Yang, CC ; Yang, TR ; Zhao, J

关键词: characterization;    crystal structure;    segregation;    metalorganic chemical vapor deposition;    nitrides;    GaN;    InGaN;    photoluminescence;    MOCVD;    phase separation;   

DOI  :  10.1016/j.tsf.2005.07.087

来源: Elsevier

【 摘 要 】

The wavelength shifts in the photoluminescence (PL) from low indium composition (similar to 3%) InGaN epitaxial thin films, grown on sapphire substrates by metalorganic chemical vapour deposition, has been studied by a combination of experiment and theory. As temperature increases from 6 K, the PL peak energy red-shifts very slightly first, then blue-shifts to reach a maximum at near 100 K, and red-shifts again till room temperature. This unique PL behaviour, indicating the existence of the phase separation, is interpreted qualitatively from the spatial variation of band structure due to the In-compositional fluctuation. Theoretical calculation, based upon a model involving the band-tail states in the radiative recombination, explains the experimental data successfully. (c) 2005 Elsevier B.V. All rights reserved.

【 授权许可】

Free