Study of Mn Doped GaN for Spintronic Applications

GaMnN;InGaN;GaN;LED;spintronics;materials science;Optoelectronics

Arkun, Fevzi Erdem ; Gerd Duscher, Committee Member,Nadia El-Masry, Committee Chair,Salah Bedair, Committee Co-Chair,Mark Johnson, Committee Member,Arkun, Fevzi Erdem ; Gerd Duscher ; Committee Member ; Nadia El-Masry ; Committee Chair ; Salah Bedair ; Committee Co-Chair ; Mark Johnson ; Committee Member

University:North Carolina State University

关键词: GaMnN;    InGaN;    GaN;    LED;    spintronics;    materials science;    Optoelectronics;   

Others  :  https://repository.lib.ncsu.edu/bitstream/handle/1840.16/4607/etd.pdf?sequence=1&isAllowed=y

美国|英语

来源: null

【 摘 要 】

Spintronics is an emerging field in which the spin of carriers in addition to the charge of carriers can be used to achieve new functionalities in electronic devices. The availability of materials exhibiting ferromagnetism above room temperature is prerequisite for realizing such devices. Materials suitable for spintronic applications are desired to be compatible with conventional growth and fabrication techniques in addition to exhibiting above room temperature ferromagnetic properties. In this research the growth of GaMnN has been achieved on (0001) sapphire substrates by metal organic chemical vapor deposition using TMGa and (EtCp₂)Mn as organometallic precursors. Magnetic characterization of the grown films was performed by a Superconducting Quantum Interference Device (SQUID) at room temperature. Ferromagnetic properties were observed above room temperature for this material. Co-doping of ferromagnetic GaMnN by silicon and magnesium was performed and ferromagnetic properties of GaMnN have been found to depend on the Fermi level in the crystal itself. The mechanism of ferromagnetism in this material was proposed to be carrier mediated. The magnetic properties were also altered by carrier transfer at a heterointerface indicating that the electronic band structure of the crystal affects the magnetic properties of this material. Growth of GaN based blue light emitting diode structures were achieved by MOCVD using conventional organometallic sources. Fabrication of grown structures was performed in a clean room using standard fabrication techniques for III-Nitrides. Two spin-LEDs containing GaMnN injector layers were also grown to determine the polarization state of the emission from these spin-LEDs.