Design, fabrication and characterization of III-nitride PN junction devices

Nitride;Devices;GaN;AlGaN;InGaN;LED;Rectifier

Limb, Jae Boum ; Electrical and Computer Engineering

University:Georgia Institute of Technology

Department:Electrical and Computer Engineering

关键词: Nitride;    Devices;    GaN;    AlGaN;    InGaN;    LED;    Rectifier;   

Others  :  https://smartech.gatech.edu/bitstream/1853/16331/1/Jae_Limb_200708_phd.pdf

美国|英语

来源: SMARTech Repository

【 摘 要 】

Design, fabrication and characterization of III-Nitride pn junction devicesJae Boum Limb94 pagesDirected by Dr. Russell D. DupuisThis dissertation describes an investigation of three types of III-nitride (AlInGaN) based p-n junction devices that were grown by metalorganic chemical vapor deposition (MOCVD).The three types of devices are Ultra-Violet (UV) avalanche photodiodes (APDs), green light emitting diodes (LEDs), and p-i-n rectifiers.For avalanche photodiodes, a material growth on low-dislocation density GaN substrates, processed with low-damage etching receipes and high quality dielectric passivations, were proposed.Using this technology, GaN APDs with optical gains greater than 3000, and AlGaN APDs showing true avalanche gains have been demonstrated.For green LEDs, the use of InGaN:Mg as the p-layer, rather than employing the conventional GaN:Mg has been proposed.Green LEDs with p-InGaN have shown higher emission intensities and lower diode series resistances compared to LEDs with p-GaN.Using p-InGaN layers, LEDs emitting at green and longer wavelengths have been realized. For p-i-n rectifiers, design, fabrication and characterization of device structures using the conventional mesa-etch configuration, as well as the full-vertical method have been proposed. High breakdown devices with low on-resistances have been achieved.Specific details on device structures, fabrication methods, and characterization results are discussed.