Pt-AlGaN/GaN HEMT-Sensor for Hydrogen Sulfide (H2S) Detection

Proceedings

Robert Sokolovskij¹  Changhui Zhao²  Fei Wang²  Elina Iervolino²  Hongyu Yu²  Pasqualina M. Sarro³  Guo Qi Zhang³  Fabio Santagata³ 

[1] Beijing Research Center, Delft University of Technology, Beijing, China;Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China;Microelectronics Department, Delft University of Technology, Delft, The Netherlands;

关键词: AlGaN;    GaN;    gas sensor;    HEMT;    hydrogen sulfide;    H2S;    high temperature;    2DEG;   

DOI  :  10.3390/proceedings1040463

来源: DOAJ

【 摘 要 】

AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8% for 80 ppm and 0.23% for 0.5 ppm H2S/air, is achieved at a temperature of 250 °C, with a corresponding ΔI of 617 μA and 18 μA, respectively, indicating suitability of the proposed sensor for industrial gas safety detectors.

【 授权许可】

Unknown