Improving Off-State Breakdown Voltage of a Double-Channel AlGaN/GaN HEMT with Air-Bridge Field Plate and Slant Field Plate

Solid State Electronics Letters

Gui-Lin Shen¹  Jyun-Jhih Wang¹  Yang-Hua Chang¹ 

[1] Department of Electronic Engineering, National Yunlin University of Science and Technology, Taiwan;

关键词: Air-bridge;    AlGaN;    breakdown voltage;    field plate;    GaN;    HEMT;   

DOI  :  

来源: DOAJ

【 摘 要 】

The off-state breakdown voltage of a double-channel AlGaN/GaN HEMT is improved by employing an air-bridge field plate (AFP) and a slant field plate at the gate electrode. It has been observed that using the AFP only can reduce the peak electric field under the gate edge to a certain extent, and a slant field plate can be added to obtain an even better result. The breakdown voltage is increased from 19 V of the initial structure to 200 V of the optimized structure.

【 授权许可】

Unknown