Band-Engineered Structural Design of High-Performance Deep-Ultraviolet Light-Emitting Diodes

Crystals

Jih-Yuan Chang¹  Yen-Kuang Kuo²  Man-Fang Huang³  Shih-Chin Lin⁴  Chih-Yung Huang⁴  Ching-Chiun Wang⁴ 

[1] Center for Teacher Education, National Changhua University of Education, Changhua 500, Taiwan;Department of Physics, National Changhua University of Education, Changhua 500, Taiwan;Institute of Photonics, National Changhua University of Education, Changhua 500, Taiwan;Mechanical and Mechatronics Systems Research Laboratory, Industrial Technology Research Institute (ITRI), Hsinchu 310, Taiwan;

关键词: AlGaN;    carrier confinement;    polarization effect;    light-emitting diodes;   

DOI  :  10.3390/cryst11030271

来源: DOAJ

【 摘 要 】

In this study, systematic structural design was investigated numerically to probe into the cross-relating influences of n-AlGaN layer, quantum barrier (QB), and electron-blocking layer (EBL) on the output performance of AlGaN deep-ultraviolet (DUV) light-emitting diodes (LEDs) with various Al compositions in quantum wells. Simulation results show that high-Al-composition QB and high-Al-composition EBL utilized separately are beneficial for the enhancement of carrier confinement, while the wall-plug efficiency (WPE) degrades dramatically if both high-Al-composition QB and EBL are existing in a DUV LED structure simultaneously. DUV LEDs may be of great optical performance with appropriate structural design by fine-tuning the material parameters in n-AlGaN layer, QB, and EBL. The design curves provided in this paper can be very useful for the researchers in developing the DUV LEDs with a peak emission wavelength ranging from 255 nm to 285 nm.

【 授权许可】

Unknown