Epitaxial growth and characterization of non-polar a-plane AlGaN films with MgN/AlGaN insertion layers

6th conference on Advances in Optoelectronics and Micro/nano-optics

Wang, Nan^1 ; Zhang, Xiong^1 ; Zhao, Jianguo^1 ; Zhang, Heng^1 ; Wu, Zili^1 ; Dai, Qian^1 ; Wang, Shuchang^2 ; Hu, Guohua^1 ; Cui, Yiping^1

Advanced Photonics Center, Southeast University, Nanjing, Jiangsu

210096, China^1

College of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, Jiangsu

215500, China^2

关键词: AlGaN;    Compressive strain;    Crystalline quality;    Insertion layers;    Metal organic;    Root mean square values;    Ultraviolet light emitting diodes;    X ray rocking curve;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/844/1/012003/pdf
DOI  :  10.1088/1742-6596/844/1/012003

来源: IOP

【 摘 要 】

The MgN/AlGaN insertion layers were applied for the first time in the growth of non-polar a-plane AlGaN epi-layers by metal organic chemical vapor deposition technology. The full-width-at-half-maximum value of X-ray rocking curve for the a-plane AlGaN epi-layer was decreased by approximately 50.6% and the root-mean-square value of the surface was reduced by 74% by inserting the MgN/AlGaN insertion layers with optimized number of insertion pairs, which revealed that the compressive strain within the a-plane AlGaN epi-layers was effectively reduced, leading to significant improvements in crystalline quality and surface morphology, which is very helpful to fabricate high quality AlGaN-based ultraviolet light-emitting-diodes.