Deposition of Cubic AlN Films on MgO (100) Substrates by Laser Molecular Beam Epitaxy

1st International Workshop on Materials Science and Mechanical Engineering

材料科学;机械制造

Mo, Z.K.^1 ; Yang, W.J.^1 ; Weng, Y.^1 ; Fu, Y.C.^1 ; He, H.^1 ; Shen, X.M.^1

Center of Ecological Collaborative Innovation for Aluminum Industry in Guangxi, Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials, College of Materials Science and Engineering, Guangxi University, Nanning, Guangxi

530004, China^1

关键词: Crystalline quality;    Deposited films;    Epitaxial relationships;    Laser molecular beam epitaxy;    Laser-pulse energy;    Preferred orientations;    Smooth surface;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/281/1/012042/pdf
DOI  :  10.1088/1757-899X/281/1/012042

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Cubic AlN (c-AlN) films were deposited on MgO (100) substrates by laser molecular beam epitaxy (LMBE) technique. The crystal structure and surface morphology of deposited films with various laser pulse energy and substrate temperature were investigated. The results indicate that c-AlN films exhibit the (200) preferred orientation, showing a good epitaxial relationship with the substrate. The surface roughness of c-AlN films increases when the laser pulse energy and substrate temperature increase. The film grown at laser pulse energy of 150 mJ and substrate temperature of 700 °C shows the best crystalline quality and relatively smooth surface.