Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

IEICE Electronics Express

Hyun Chang Park¹  Mansoor Ali Khan¹ 

[1] Division of Electronics and Electrical Engineering, Dongguk University-Seoul

关键词: HEMT;    GaN;    field-plate (FP);    lateral;    TGDFP;    power;    RF;   

DOI  :  10.1587/elex.11.20140163

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(18)In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5µm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in S-band (∼3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.

【 授权许可】

Unknown