High-Performance InGaAs HEMTs on Si Substrates for RF Applications

Electronics

Bo Wang¹  Haiou Li¹  Xiaoyu Liu²  Peng Ding²  Ruize Feng²  Haomiao Wei²  Zhi Jin²  Yanfu Wang²  Shurui Cao²  Tong Liu² 

[1] Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin 541004, China;High-Frequency High-Voltage Device and Integrated Circuits Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;

关键词: InGaAs HEMTs;    Si substrates;    wafer bonding;    maximum extrinsic transconductance (g_m,max);    current gain cutoff frequency (f_T);   

DOI  :  10.3390/electronics11020259

来源: DOAJ

【 摘 要 】

In this paper, we have fabricated InGaAs high-electron-mobility transistors (HEMTs) on Si substrates. The InAlAs/InGaAs heterostructures were initially grown on InP substrates by molecular beam epitaxy (MBE), and the adhesive wafer bonding technique was employed to bond the InP substrates to Si substrates, thereby forming high-quality InGaAs channel on Si. The 120 nm gate length device shows a maximum drain current (I${}_{D,max}$) of 569 mA/mm, and the maximum extrinsic transconductance (g${}_{m,max}$) of 1112 mS/mm. The current gain cutoff frequency (f${}_T$) is as high as 273 GHz and the maximum oscillation frequency (f${}_{MAX}$) reaches 290 GHz. To the best of our knowledge, the g${}_{m,max}$ and the f${}_T$ of our device are the highest ever reported in InGaAs channel HEMTs on Si substrates at given gate length above 100 nm.

【 授权许可】

Unknown