Hybrid Integrated Platforms for Silicon Photonics

Materials

Di Liang¹  Gunther Roelkens²  Roel Baets² 

[1]Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA, 93106, USA

[2] E-Mail:

[3]Photonics Research Group, IMEC - Ghent University, Sint-Pietersnieuwstraat 41, B-9000 Ghent, Belgium

[4] E-Mails:

关键词: hybrid integration;    wafer bonding;    silicon photonics;   

DOI  :  10.3390/ma3031782

来源: mdpi

【 摘 要 】

A review of recent progress in hybrid integrated platforms for silicon photonics is presented. Integration of III-V semiconductors onto silicon-on-insulator substrates based on two different bonding techniques is compared, one comprising only inorganic materials, the other technique using an organic bonding agent. Issues such as bonding process and mechanism, bonding strength, uniformity, wafer surface requirement, and stress distribution are studied in detail. The application in silicon photonics to realize high-performance active and passive photonic devices on low-cost silicon wafers is discussed. Hybrid integration is believed to be a promising technology in a variety of applications of silicon photonics.

【 授权许可】

CC BY   
© 2010 by the authors; licensee MDPI, Basel, Switzerland.