Observation of spatial distribution of vacancy defects in semiconductor by positron microscope and electron beam induced current measurement

16th International Conference on Positron Annihilation

Maekawa, M.^1 ; Kawasuso, A.^1

Advanced Science Research Center, Japan Atomic Energy Agency, Watanuki 1233, Takasaki, Gunma, Japan^1

关键词: Carrier recombination;    Electron-beam-induced current;    Si substrates;    Spatially resolved;    Vacancy Defects;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/443/1/012041/pdf
DOI  :  10.1088/1742-6596/443/1/012041

来源: IOP

【 摘 要 】

A complementary study of vacancy defects in Si substrates by using scanning positron microscope (SPM) and electron beam induced current (EBIC) method were demonstrated for the same samples and in the same chamber. Both the S parameter and EBIC contrast were found to be enhanced in the regions containing vacancy defects introduced by ion implantation. That is, the SPM provides a criterion if the spatially resolved carrier recombination centres by the EBIC method are originating from vacancy defects or not.