Characterization of and Ti Gettering for PV Substrates: Final Subcontract Report; 28 January 1998 - 28 August 2001.

Rozgonyi, G. A. ; Aroui, A. ; Omanowski, A. ; Ordas, L.

Technical Information Center Oak Ridge Tennessee

关键词: Getters;    Photovoltaics;    Solar energy;    Titanium;    Carrier recombination;   

RP-ID  :  DE200215000712

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

This report describes two project objectives: to determine optical and gettering properties of titanium and titanium oxy-nitride films, and to examine the influence of carrier recombination processes on the microwave reflection coefficient in the frequency domain such that PV materials parameters could be evaluated nondestructively. A third topic was added as the main focus, wherein we carried out a detailed characterization study of dislocated, high-purity, float-zone crystals grown at NREL. These crystalswere compared with nitrogen-doped CZ wafers. The accompanying report has a chapter devoted to each of these topics: (1) characterization of controlled defect/impurity growth of float-zone crystals; (2) contactless characterization of silicon wafers using frequency-resolved photoconductance decay; and (3) gettering and surface reflectivity of Ti thin films.