科技报告详细信息
| Precipitate Dissolution and Gettering under Vacancy Injection in Silicon: Final Subcontract Report, 21 March 2006 - 15 January 2008. | |
| Tan, T. ; Li, N. | |
| Technical Information Center Oak Ridge Tennessee | |
| 关键词: Photovoltaics; Silicon; Gettering; Getters; Dissolution; | |
| RP-ID : DE2008939277 | |
| 学科分类：工程和技术（综合） | |
| 美国|英语 | |
| 来源: National Technical Reports Library | |
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【 摘 要 】
This paper summarizes the mechanisms of vacancy injection, radiation-enhanced solubility, and radiation-enhanced diffusion of vacancies and metal impurity atoms in silicon.
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| DE2008939277.pdf | 372KB |  download |
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