Laser-doping of crystalline silicon substrates using doped silicon nanoparticles

THIN SOLID FILMS

卷:548

Article

Meseth, Martin^1,2  Lamine, Kais^1,2  Dehnen, Martin^1,2  Kayser, Sven³  Brock, Wolfgang⁴  Behrenberg, Dennis^5,6  Orthner, Hans^1,2  Elsukova, Anna^1,7  Hartmann, Nils^5,6  Wiggers, Hartmut^1,2  Huelser, Tim⁸  Nienhaus, Hermann^1,7  Benson, Niels^1,2  Schmechel, Roland^1,2 

[1] Univ Duisburg Essen, D-47057 Duisburg, Germany

[2] CeNIDE, Fac Engn, Duisburg, Germany

[3] ION TOF GmbH, Munster, Germany

[4] Tascon GmbH, Munster, Germany

[5] Univ Duisburg Essen, Essen, Germany

[6] CeNIDE, Fac Chem, Essen, Germany

[7] CeNIDE, Fac Phys, Duisburg, Germany

[8] IUTA, Duisburg, Germany

关键词: Laser doping;    Laser crystallization;    Silicon;    Nanoparticles;    Photovoltaics;   

DOI  :  10.1016/j.tsf.2013.09.056

来源: Elsevier

【 摘 要 】

Crystalline Si substrates are doped by laser annealing of solution processed Si. For this experiment, dispersions of highly B-doped Si nanoparticles are deposited onto intrinsic Si and laser processed using an 807.5 nm continuous wave laser. During laser processing the particles as well as a surface-near substrate layer are melted to subsequently crystallize in the same orientation as the substrate. The doping profile is investigated by secondary ion mass spectroscopy revealing a constant B concentration of 2 x 10(18) cm(-3) throughout the entire analyzed depth of 5 mu m. Four-point probe measurements demonstrate that the effective conductivity of the doped sample is increased by almost two orders of magnitude. The absolute doping depth is estimated to be in between 8 mu m and 100 mu m. Further, a pn-diode is created by laser doping an n-type c-Si substrate using the Si NPs. (C) 2013 Published by Elsevier B. V.

【 授权许可】

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