Investigation of Gettering Mechanisms in Crystalline Silicon. Final Subcontract Report 21 July 1997-30 September 2003.

Tan, T. Y.

Technical Information Center Oak Ridge Tennessee

关键词: Solar cells;    Silicon;    Crystallization;    Gettering;    Schottky effect;   

RP-ID  :  DE200415007599

学科分类：工程和技术（综合）

美国|英语

来源: National Technical Reports Library

【 摘 要 】

In this investigation, various aspects of the mechanisms of gettering contaminant impurities away from device active regions in Si have been systematically conducted. Also systematically studied are the modeling of electrical activity of metallic precipitates in Si based on the Schottky effect. With these studies, our knowledge of gettering in Si and on the electrical activity of metallic precipitates in Si has become substantially complete in the sense that interpretations of major experimental results have become self- and mutually consistent. The purpose of conducting the studies supported by this project was to obtain consistent interpretations of existing experimental results, as well as to conduct the needed new experiments, concerning the various phenomena associated with gettering in Si.