Microscopic and Macroscopic Bipolar Injection and Carrier Recombination in Single-layer Si Nanocrystals

2018 3rd International Conference on Advanced Materials Research and Manufacturing Technologies

材料科学;机械制造

Xu, Jie^1 ; Zheng, Shulin^1 ; Chen, Yuxing^1 ; Li, Wei^2 ; Xu, Jun^2

College of Electronic and Optical Engineering, College of Microelectronics, Nanjing University of Posts and Telecommunications, Nanjing

210023, China^1

National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing

210093, China^2

关键词: Alternating current;    Bipolar injection;    Carrier injection;    Carrier recombination;    Electrostatic force microscopy;    Frequency dependent;    Radiative recombination process;    Recombination process;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/436/1/012003/pdf
DOI  :  10.1088/1757-899X/436/1/012003

学科分类：材料科学（综合）

来源: IOP

【 摘 要 】

Si nanocrystals (NCs) based optoelectronic devices have attracted more and more attentions due to the quasi-direct energy band structure and the adjustable band gap of Si NCs. In these optoelectronic devices, the carrier injection and recombination process is a crucial issue and needs to be deeply understood. Here, bipolar carrier injection and recombination process in a single layer of Si NCs was observed at the microscopic and macroscopic scales, by electrostatic force microscopy (EFM) and alternating-current electroluminescence (ac EL) measurement, respectively. EFM result showed that opposite charges could be injected into the single-layer Si NCs and they would laterally recombine with each other. On the other hand, the single-layer Si NCs also showed a frequency dependent EL intensity, which was attributed to the time limitation of carrier injection and radiative recombination process.