Preparation of tin oxide (SnO2) thin films using thermal oxidation

4th Asia Pacific Conference on Manufacturing Systems; 3rd International Manufacturing Engineering Conference

Abdullah, N.^1 ; Ismail, N.M.^1 ; Nuruzzaman, D.M.^1

Faculty of Manufacturing Engineering, University Malaysia Pahang, Pekan Pahang Darul Makmur

26600, Malaysia^1

关键词: Growth time;    Research studies;    Si substrates;    Silicon substrates;    Sunny days;    Thermal oxidation;    Tube furnaces;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/319/1/012022/pdf
DOI  :  10.1088/1757-899X/319/1/012022

来源: IOP

【 摘 要 】

The present research study deals with the preparation of tin oxide (SnO2) nanostructures using thermal oxidation method. At first, Sn thin film was deposited on silicon (Si) substrate by thermal evaporation and then, thermal oxidation of the deposited Sn thin film was carried out at the growth temperature of 100C with growth time of 1 hour in tube furnace. The structural property of SnO2nanostructures was investigated by using FESEM and EDX. The FESEM results showed that Sn was successfully grown on Si substrate and the SnO2nanoparticles with diameters of 97.5nm to 142nm were recorded. It was observed that the particles were agglomerated to form the SnO2particles. The radiation of sunlight illumination was conducted for four consecutive sunny days and the results showed that the highest reading 189.9 W/m2was recorded at day two for the daytime temperature 38C. It was also noticed that the highest solar radiation percentage at day two was measured 18.9%.