Separation of stress-free AlN/SiC thin films from Si substrate

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Redkov, A.V.^1,2 ; Osipov, A.V.^1,2,3 ; Mukhin, I.S.^1,3 ; Kukushkin, S.A.^1,2,3,4

St. Petersburg Academic University, St. Petersburg

194021, Russia^1

Institute of Problems of Mechanical Engineering RAS, St. Petersburg

199178, Russia^2

ITMO University, St. Petersburg

197101, Russia^3

Peter the Great St. Petersburg Polytechnic University, St. Petersburg

195251, Russia^4

关键词: Chemical etching;    Coefficients of thermal expansions;    Growth of thin films;    Mechanical stress;    Original sample;    Si substrates;    Silicon substrates;    Subsurface structures;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012034/pdf
DOI  :  10.1088/1742-6596/741/1/012034

来源: IOP

【 摘 要 】

We separated AlN/SiC film from Si substrate by chemical etching of the AlN/SiC/Si heterostructure. The film fully repeats the size and geometry of the original sample and separated without destroying. It is demonstrated that a buffer layer of silicon carbide grown by a method of substitution of atoms may have an extensive hollow subsurface structure, which makes it easier to overcome the differences in the coefficients of thermal expansion during the growth of thin films. It is shown that after the separation of the film from the silicon substrate, mechanical stresses therein are almost absent.