Comparison of self-assisted VLS GaAs nanowires grown by MBE on Si (111) and GaAs (111)B substrates

33rd International Conference on the Physics of Semiconductors

Vorathamrong, Samatcha^1 ; Panyakeow, Somsak^1 ; Ratanathammaphan, Somchai^1 ; Praserthdam, Piyasan^2 ; Thongyam, Chiraporn^3

Semiconductor Device Research Laboratory, Department of Electrical Engineering, Chulalongkorn University, Bangkok

10330, Thailand^1

Center of Excellence on Catalysis and Catalytic Reaction Engineering, Department of Chemical Engineering, Chulalongkorn University, Bangkok

10330, Thailand^2

Center of Research and Technology Development, Mektec Manufacturing Ltd., Chulalongkorn University, Bangkok

10330, Thailand^3

关键词: Energy dispersive X ray spectroscopy;    Gaas nanowires;    Growth method;    Growth parameters;    Growth time;    Si (1 1 1);    Si(111) substrate;    Substrate types;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/864/1/012004/pdf
DOI  :  10.1088/1742-6596/864/1/012004

来源: IOP

【 摘 要 】

In this work GaAs nanowires were grown by self-assisted growth method with completely identical growth parameters, such as growth temperature, growth time, Ga and As flux, on GaAs (111)B and Si (111) substrates using Molecular Beam Epitaxy (MBE). All samples were then characterized by Scanning Electron Microscope (SEM), Energy-dispersive X-ray spectroscopy (EDX), and X-ray Diffraction (XRD). The results from both substrates were compared in order to understand the effect of substrate type on nanowires.