Effect of GaAs native oxide upon the surface morphology during GaAs MBE growth

3rd International School and Conference on Optoelectronics, Photonics, Engineering and Nanostructures (Saint Petersburg OPEN 2016)

Ageev, O.A.^1 ; Solodovnik, M.S.^1 ; Balakirev, S.V.^1 ; Mikhaylin, I.A.^1 ; Eremenko, M.M.^1

Southern Federal University, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Department of Nanotechnologies and Microsystems, 2 Shevchenko Street, Taganrog

347928, Russia^1

关键词: Droplet arrays;    Gaas nanowires;    Growth parameters;    MBE growth;    Native oxide layer;    Native oxides;    Rough surfaces;    Substrate temperature;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/741/1/012012/pdf
DOI  :  10.1088/1742-6596/741/1/012012

来源: IOP

【 摘 要 】

The GaAs native oxide effect upon the surface morphology of the GaAs epitaxial layer was studied with taking into account the main growth parameters of MBE technology: substrate temperature, effective As4/Ga flux ratio and growth rate. The MBE modes of atomically smooth and rough surfaces and surfaces with Ga droplet array formation were determined. The possibility of the obtaining of GaAs nanowires via GaAs native oxide layer was shown.