MBE growth and optical properties of GaAs nanowires grown on Si(111) substrate using two-temperature steps regime

2nd International School and Conference Saint-Petersburg OPEN on Optoelectronics, Photonics, Engineering and Nanostructures

Reznik, R.R.^1,2 ; Shtrom, I.V.^1,4,5 ; Samsonenko, Yu.B.^1,3,4 ; Khrebtov, A.I.^1 ; Bourauvlev, A.D.^1,3,4,5 ; Soshnikov, I.P.^1,3,4 ; Kryzhanovskaya, N.V.^1,2 ; Cirlin, G.E.^1,2,3,4,5

St-Petersburg Academic University, Nanotechnology Research and Education Centre RAS, Khlopina 8/3, St-Petersburg

194021, Russia^1

St-Petersburg State Polytechnical University - Nanotechnology, Polytechnicheskaya 29, St-Petersburg

195251, Russia^2

Ioffe Physical Technical Institute RAS, Politekhnicheskaya 26, St- Petersburg

194021, Russia^3

Institute for Analytical Instrumentation RAS, Rizhsky 26, St-Petersburg

190103, Russia^4

St. Petersburg State University, St. Petersburg

199034, Russia^5

关键词: Fine structures;    Gaas nanowires;    Low temperatures;    MBE growth;    Narrow bands;    Si substrates;    Si(111) substrate;    Temperature growth;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/643/1/012003/pdf
DOI  :  10.1088/1742-6596/643/1/012003

来源: IOP

【 摘 要 】

We report on the growth and optical properties of pencil-like GaAs nanowires (NWs) grown using an original two-temperature growth mode on Si substrate. Optically, the NWs array is active up to the room temperature. The low-temperature PL spectra is composed by the narrow bands corresponding to the direct, bound to surface states and bound to impurity excitons. After toluene treatment, the fine structure is disappeared in the spectra.