Sn influence on MBE growth of GeSiSn/Si MQW

18th Russian Youth Conference on Physics of Semiconductors and Nanostructures, Opto- and Nanoelectronics

Tuktamyshev, A.R.^1 ; Timofeev, V.A.^1 ; Nikiforov, A.I.^1,2 ; Mashanov, V.I.^1 ; Gutakovskii, A.K.^1 ; Baydakova, N.A.^3

Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk

630090, Russia^1

National Research Tomsk State University, Tomsk

634050, Russia^2

Institute for Physics of Microstructures RAS, Nizhny Novgorod

607680, Russia^3

关键词: Composition dependency;    Critical thickness;    MBE growth;    Multi quantum wells;    Multilayer structures;    Si(1 0 0);    Sn contents;    Three-dimensional growth;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/816/1/012020/pdf
DOI  :  10.1088/1742-6596/816/1/012020

来源: IOP

【 摘 要 】

Temperature and composition dependencies of the critical thickness of transition from two-dimensional to three-dimensional growth for GeSiSn films on Si(100) with a lattice mismatch of 1 - 5% were experimentally determined. To understand the Sn influence on growth of SiGeSn/Si multi-quantum wells, the phase diagram of surface superstructures during the growth of pure Sn on Si(100) was created. A possibility of synthesizing multilayer structures by molecular beam epitaxy was shown, and the crystal lattice constants were determined using high-resolution transmission electron microscopy. We obtained GeSiSn/Si MQW structures which demonstrated photoluminescence for the Sn content in GeSiSn layers of up to 6%.