In-situ electrical and structural characterization of individual GaAs nanowires

Electron Microscopy and Analysis Group Conference 2013

Fauske, V.T.^1 ; Kim, D.C.^2 ; Munshi, A.M.^2 ; Dheeraj, D.L.^2 ; Fimland, B.-O.^2 ; Weman, H.^2 ; Van Helvoort, A.T.J.^1

Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway^1

Department of Electronics and Telecommunications, Norwegian University of Science and Technology, NO-7491 Trondheim, Norway^2

关键词: Electrical characteristic;    Electrical characterization;    Electron microscopy systems;    Gaas nanowires;    Nano manipulator;    Structural characteristics;    Structural characterization;    Substrate system;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/522/1/012080/pdf
DOI  :  10.1088/1742-6596/522/1/012080

来源: IOP

【 摘 要 】

A method for probing the electrical and structural characteristics of individual as-grown III-V nanowires was studied. In-situ electrical characterization was performed in a focused ion beam / scanning electron microscopy system by using a fine nano-manipulator and ion beam assisted deposition. Transmission electron microscopy specimens of probed nanowires are prepared afterwards. This method would potentially allow the correlation of electrical and structural characteristics (e.g. crystal faults such as twinning) of the nanowire-substrate system. The challenge is in contacting the nanowires so that the electrical characteristics of the nanowire-substrate system can be extracted correctly.