N-type doping of BaSi2 epitaxial films by phosphorus ion implantation and thermal annealing

THIN SOLID FILMS

卷:557

Article; Proceedings Paper

Hara, Kosuke O.^1,2  Hoshi, Yusuke¹  Usami, Noritaka^1,2  Shiraki, Yasuhiro³  Nakamura, Kotaro⁴  Toko, Kaoru⁴  Suemasu, Takashi^2,4 

[1] Nagoya Univ, Grad Sch Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Japan Sci & Technol Agcy, Core Res Evolut Sci & Technol, Chiyoda Ku, Tokyo 1020076, Japan

[3] Tokyo City Univ, Adv Res Labs, Setagaya Ku, Tokyo 1580082, Japan

[4] Univ Tsukuba, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

关键词: Silicide semiconductor;    Epitaxial film;    Phosphorus impurity;    Ion implantation;    Surface segregation;    Electrical characterization;   

DOI  :  10.1016/j.tsf.2013.08.038

来源: Elsevier

【 摘 要 】

Phosphorus doping by P implantation and thermal annealing of the BaSi2 epitaxial film grown on the Si(111) substrate has been studied. Raman spectroscopy results show that the structural damage due to P implantation can be almost removed by annealing within 30 and 1 s at 500 and 700 degrees C, respectively. The depth profile of P is investigated by secondary ion mass spectroscopy, which reveals considerably slower diffusion kinetics of P at 500 degrees C than 700 degrees C. The activation energy of the diffusion is roughly estimated to be 2 eV from the temperature dependence. The Hall measurement of the P-doped films clarifies that the P impurity is an electron donor in BaSi2. The average electron density up to the order of 10(18) cm(-3) is observed. (c) 2013 Elsevier B.V. All rights reserved.

【 授权许可】

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