Laterally inhomogeneous barrier analysis of cu/n-gap/al schottky devices

International Physics Conference at the Anatolian Peak 2016

Demir, K. Çinar^1 ; Cokun, C.^2 ; Kurudirek, S.V.^3 ; Öz, S.^3 ; Aydoan, S.^3 ; Biber, M.^3

Atatürk University, Oltu Earth Sciences Faculty, Department of Mining Engineering, Erzurum

25400, Turkey^1

Giresun University, Faculty of Arts and Sciences, Department of Physics, Giresun

28100, Turkey^2

Atatürk University, Faculty of Sciences, Department of Physics, Erzurum

25240, Turkey^3

关键词: Capacitance voltage;    Current-voltage measurements;    Electrical characteristic;    Electrical characterization;    Electrical parameter;    Schottky devices;    Schottky structures;    Statistical study;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/707/1/012023/pdf
DOI  :  10.1088/1742-6596/707/1/012023

来源: IOP

【 摘 要 】

In this study, we examined the electrical parameters of Cu/n-GaP/Al Schottky structures at room temperature and examined the electrical characterization of these devices depending on and Capacitance-Voltage (C-V) and Current-Voltage (I-V) measurements. A statistical study on the experimental ideality factor (n) and BHs(barrier heights) values of the devices was stated. The n and BHs of all contacts have been determined from the electrical characteristics. Even though all of the diodes were conformably prepared, there was a diode-todiode variation: the effective BHs changed from 0.988-0.07 to 1.216-0.07 eV, and the n from 1.01-0.299 to 2.16-0.299. The yielded results show that the mean electrical parameters of Schottky devices are different from one diode to another, even if they are identically prepared. It can be axplained that the lower BHs usher with the higher n values owing to inhomogeneities.