Substrate temperature effects on reactively sputtered Cr2O3/n-Si heterojunctions

International Physics Conference at the Anatolian Peak 2016

Ocak, Yusuf Selim^1 ; Issa, Ali Ahmed^2 ; Genisel, Mustafa Fatih^1 ; Tombak, Ahmet^3 ; Kilicoglu, Tahsin^3

Department of Science, Faculty of Education, Dicle University, Diyarbakir, Turkey^1

Department of Science, Institute of Natural and Applied Science, Dicle University, Diyarbakir, Turkey^2

Department of Physics, Faculty of Art and Science, Batman University, Batman, Turkey^3

关键词: Capacitance voltage;    Current-voltage measurements;    Electrical parameter;    Radio frequencies;    Series resistances;    Sputtering techniques;    Substrate temperature;    Substrate temperature effect;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/707/1/012026/pdf
DOI  :  10.1088/1742-6596/707/1/012026

来源: IOP

【 摘 要 】

To see the effects of substrate temperature on Cr2O3/n-Si heterojunctions, Cr2O3thin films were formed on n-Si and glass substrates at 40, 150 and 250 °C by radio frequency (RF) reactive sputtering technique. High purity Cr was used as target and oxygen was used as reactive gas. Optical properties of Cr2O3/n-Si thin films were analyzed using UV-vis data. The band gaps of the films were compared. The electrical properties of Cr2O3/n-Si heterojunction were tested by their current voltage (I-V) measurements in dark. It was observed that the heterojunction which was fabricated by forming Cr2O3thin film at 250 °C gave better rectification. The characteristic electrical parameters such as barrier height, ideality factor and series resistance were calculated by using its I-V data. The influence of light intensity on photovoltaic effect behavior of the device was also calculated, finally the barrier height value of the structure obtained from capacitance-voltage (C-V) data were compared with the one calculated from I-V measurements.