Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current-voltage measurements

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Article

Venter, A.¹  Murape, D. M.¹  Botha, J. R.¹  Auret, F. D.² 

[1] Nelson Mandela Metropolitan Univ, Dept Phys, ZA-6031 Port Elizabeth, South Africa

[2] Univ Pretoria, Dept Phys, ZA-0002 Pretoria, South Africa

关键词: Current-voltage measurements;    Transport characteristics;    Barrier height;    Gaussian distribution;   

DOI  :  10.1016/j.tsf.2014.11.057

来源: Elsevier

【 摘 要 】

The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current-voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, phi(b) vs. 1/2kT revealed a double Gaussian distribution for the barrier height with phi(b,mean) assuming values of 0.59 eV +/- 0.07 (80-140 K) and 0.25 eV +/- 0.12 (140-320 K) respectively. (C) 2014 Elsevier B.V. All rights reserved.

【 授权许可】

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