In-situ Growth of Sn-Doped ZnO Nanotetrapods using Thermal CVD Method

6th International Conference on Electronic Devices, Systems and Applications 2017

无线电电子学;工业技术

Shariffudin, S.S.^1 ; Azhar, N.E.A.^1 ; Rodzuan, A.Z.^1 ; Sarah, M.S.P.^1 ; Hashim, H.^1

Faculty of Electrical Engineering, Universiti Teknologi MARA, Selangor, Shah Alam

40450, Malaysia^1

关键词: Atomic percentage;    Chemical vapour deposition;    Current-voltage measurements;    Dopant concentrations;    Energy dispersive X ray spectroscopy;    Field emission scanning electron microscopy;    Optical and electrical properties;    Photoluminescence spectrum;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/340/1/012004/pdf
DOI  :  10.1088/1757-899X/340/1/012004

学科分类：工业工程学

来源: IOP

【 摘 要 】

Tin (Sn) insitu doping of Zinc Oxide (ZnO) nanotetrapods (T-SZnO) were successfully grown using thermal chemical vapour deposition (TCVD) method. The objective of this paper is to study the surface morphology, optical and electrical properties of the samples by varying the atomic percentage of the Sn during the deposition. All samples were annealed at temperature of 500°C for 1 hour. Field emission scanning electron microscopy (FESEM) images showed that diameter and length of nanotetrapods increased with the dopant concentration. Energy dispersive x-ray spectroscopy (EDX) showed that the nanotetrapod ZnO had been doped with Sn. Red shift was observed in the visible blue emission and a decrease in both UV and visible peaks for the photoluminescence spectra. Current-voltage (I-V) measurement showed the current increased with the dopant concentration.