Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

THIN SOLID FILMS

卷:654

Article

Wang, Buguo^1,4  Fang, Z-Q.¹  Claflin, Bruce²  Look, David^1,2  Kouvetakis, John³  Yeo, Yung Kee⁴ 

[1] Wright State Univ, Semicond Res Ctr, Dayton, OH 45435 USA

[2] US Air Force, Sensors Directorate, Res Lab, Wright Patterson AFB, OH 45433 USA

[3] Arizona State Univ, Dept Chem & Biochem, Tempe, AZ 85287 USA

[4] Air Force Inst Technol, Dept Engn Phys, Wright Patterson AFB, OH 45433 USA

关键词: Group IV semiconductor;    Germanium-silicon-tin;    Photodiode;    Electrical characterization;    Deep-level trap spectroscopy;    Chemical vapor deposition;   

DOI  :  10.1016/j.tsf.2018.03.071

来源: Elsevier

【 摘 要 】

Electrical characteristics and deep-level transient spectroscopy of a Ge0.873Si0.104Sn0.023 photodiode grown by ultra-high vacuum chemical vapor deposition on a p++ Ge platform are investigated. The photodiode shows good rectifying I-V characteristics, and the dark current exhibits an activation energy of E-dc = 0.43 eV at high temperature while the reverse bias leakage current in the film is low but increases with temperature. Capacitance-voltage measurements show the diode has a built-in potential of 0.37 V at 300 K; the depth profile obtained from capacitance-voltage measurements is in agreement with secondary ion mass spectrometry analysis reported previously. Deep level transient spectroscopy shows two electron traps at similar to 100 K and at similar to 165 K with energy levels at similar to 0.09 eV and similar to 0.36 eV from the conduction band, respectively; and at least one hole trap at similar to 275 K with energy level at similar to 0.61 eV from the valence band (similar to 0.33 eV from the conduction band) existing in the device.

【 授权许可】

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