Electrical characterization of Au/ZnO/Si Schottky contact

6th Vacuum and Surface Sciences Conference of Asia and Australia

Asghar, M.^1 ; Mahmood, K.^1 ; Faisal, M.^1 ; Hasan, M.A.^2

Department of Physics, Islamia University of Bahawalpur, Pakistan^1

Department of Electrical and Computer Engineering, UNC, Charlotte, NC, United States^2

关键词: Capacitance voltage measurements;    Electrical characterization;    Increasing temperatures;    Saturation current;    Schottky contacts;    Temperature dependence;    Temperature dependent;    Temperature values;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/439/1/012030/pdf
DOI  :  10.1088/1742-6596/439/1/012030

来源: IOP

【 摘 要 】

In this study, temperature dependent current-voltage (I-V) and capacitance-voltage (C-V) measurements have been performed on Au/ZnO/Si Schottky barrier diode in the range 150-400K. The room temperature values for ideality factor and barrier height found to be 2.68 and 0.68 eV respectively. From the temperature dependence of I-V, the ideality factor was observed to decrease with increasing temperature and barrier height increased with increasing temperature. The observed barrier height trend was disagreeing with the negative temperature coefficient for semiconductor. A deep defect with activation energy 0.57 eV below the conduction band was observed using the saturation current plot and deep level transient spectroscopy.