Electrical characterization of In-N codoped p-type ZnO films grown by chemical methods

18th International School on Condensed Matter Physics: "Challenges of Nanoscale Science: Theory, Materials, Applications"

Duta, M.^1 ; Simeonov, S.^2 ; Spasov, D.^2 ; Mihaiu, S.^1 ; Anastasescu, M.^1 ; Szekeres, A.^2 ; Gartner, M.^1 ; Zaharescu, M.^1

Institute of Physical Chemistry Ilie Murgulescu, Romanian Academy, 202 Splaiul Independentei, Bucharest

060021, Romania^1

Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, Sofia

1784, Bulgaria^2

关键词: Capacitance voltage measurements;    Chemical routes;    Donor and acceptor;    Doping concentration;    Electrical characterization;    Hydrothermal treatments;    Nitrogen acceptors;    Specific resistivities;   

Others  :  https://iopscience.iop.org/article/10.1088/1742-6596/558/1/012038/pdf
DOI  :  10.1088/1742-6596/558/1/012038

来源: IOP

【 摘 要 】

Preliminary results of the studies of electrical properties of ZnO films, codoped with donor and acceptor pair In-N are reported. The films were grown on Si substrates by chemical route procedures involving a sol-gel followed by hydrothermal treatment at 500°C. For electrical characterization, current-voltage and capacitance-voltage measurements were conducted on MIS structures with embedded ZnO(In,N) films. The estimated doping concentration in the studied films is higher than 1×1016cm-3corresponding to a semiconductor with good conductivity. However, the obtained large values of the differential specific resistivity (ρ 3.2×105Ωcm) suggest that the nitrogen acceptors in these films are compensated by some kind of donor-type defects.