Oxide-Free Bonding of III-V-Based Material on Silicon and Nano-Structuration of the Hybrid Waveguide for Advanced Optical Functions

Photonics

Konstantinos Pantzas¹  Ahmad Itawi¹  Isabelle Sagnes¹  Gilles Patriarche¹  Eric Le Bourhis⁴  Anatole Lupu²  Henri Benisty³ 

[1] Laboratoire de Photonique et de Nanostructures, route de Nozay, F-91460 Marcoussis, France; E-Mails:;Institut d’Electronique Fondamentale, Université d’Orsay, 91405 Orsay, France; E-Mail:;Laboratoire Charles Fabry, UMR 8501, Institut d’Optique, CNRS, Univ Paris Sud 11, 2 Avenue Augustin Fresnel, 91127 Palaiseau Cedex, France; E-Mail:;Institut P’, CNRS Université de Poitiers-Bd Marie Pierre Cuire, B.P. 30179, 86962 Futuroscope-Chasseneuil Cedex, France; E-Mail:

关键词: silicon photonics hybrid integration;    III-V materials;    wafer bonding;    oxide-free bonding;    silicon waveguide nanopatterning;    telecom optical functions;   

DOI  :  10.3390/photonics2041054

来源: mdpi

【 摘 要 】

Oxide-free bonding of III-V-based materials for integrated optics is demonstrated on both planar Silicon (Si) surfaces and nanostructured ones, using Silicon on Isolator (SOI) or Si substrates. The hybrid interface is characterized electrically and mechanically. A hybrid InP-on-SOI waveguide, including a bi-periodic nano structuration of the silicon guiding layer is demonstrated to provide wavelength selective transmission. Such an oxide-free interface associated with the nanostructured design of the guiding geometry has great potential for both electrical and optical operation of improved hybrid devices.

【 授权许可】

CC BY   
© 2015 by the authors; licensee MDPI, Basel, Switzerland.