Peculiarities of the interface between high-permittivity dielectrics and semiconductors

Frontiers in Materials

Nenad eNovkovski¹ 

[1] Faculty of Natural Sciences, Ss. Cyril and Methodius University;

关键词: tunneling;    high-k dielectrics;    permittivity;    Band offsets;    Metal-oxide-semiconductor structures;   

DOI  :  10.3389/fmats.2014.00030

来源: DOAJ

【 摘 要 】

Replacement of the silicon dioxide thin films in metal-oxide-semiconductor structures for microelectronics with high permittivity dielectrics (high-k) is a crucial step in the further down-scaling of microelectronic devices. Technological development of the fabrication processes and better theoretical understanding of the physical phenomena in the considered structures are demanded simultaneously. Important issues concerning high-k are discussed in these paper and directions for further development indicated. Further progress requires better understanding of the physical phenomena appearing in stacked high-k/interfacial layer dielectrics.

【 授权许可】

Unknown