Effect of Γ-X band mixing on the donor binding energy in a Quantum Wire

International Conference on Materials Science and Technology 2012

Shanthi, R. Vijaya^1 ; Jayakumar, K.^1 ; Nithiananthi, P.^1

Department of Physics, Gandhigram Rural University, Gandhigram, Tamilnadu

624 302, India^1

关键词: Band offsets;    Gamma band;    Indirect transition;    Low-Dimensional Semiconductors;    Optical behavior;    Quantum well wire;    Technological applications;    X bands;   

Others  :  https://iopscience.iop.org/article/10.1088/1757-899X/73/1/012100/pdf
DOI  :  10.1088/1757-899X/73/1/012100

来源: IOP

【 摘 要 】

To invoke the technological applications of heterostructure semiconductors like Quantum Well (QW), Quantum Well Wire (QWW) and Quantum Dot (QD), it is important to understand the property of impurity energy which is responsible for the peculiar electronic & optical behavior of the Low Dimensional Semiconductor Systems (LDSS). Application of hydrostatic pressure P>35kbar drastically alters the band offsets leading to the crossover of Γ band of the well & X band of the barrier resulting in an indirect transition of the carrier and this effect has been studied experimentally and theoretically in a QW structure. In this paper, we have investigated the effect of Γ-X band mixing due to the application of hydrostatic pressure in a GaAs/AlxGa1-xAs QWW system. The results are presented and discussed for various widths of the wire.