Direct growth of Ge1-xSnx films on Si using a cold-wall ultra-high-vacuum chemical-vapor-deposition system

Frontiers in Materials

Baohua eLi¹  Larry C. Cousar¹  Joshua M. Grant²  Thach ePham³  Shui-Qing eYu³  Hameed A. Naseem³  Aboozar eMosleh³  Seyed Amir eGhetmiri³  Wei eDu³  Murtadha A. Alher⁴  Greg eSun⁵  Richard A. Soref⁵ 

[1] Arktonics;Southern Arkansas University;University of Arkansas;University of Kerbala;University of Massachusetts;

关键词: Photoluminescence;    chemical vapor deposition (CVD);    Si photonics;    GeSn;    Ge alloys;   

DOI  :  10.3389/fmats.2015.00030

来源: DOAJ

【 摘 要 】

Germanium tin alloys were grown directly on Si substrate at low temperatures using a cold-wall ultra-high vacuum chemical vapor deposition system.Epitaxial growth was achieved by adopting commercial gas precursors of germane and stannic chloride without any carrier gases.The X-ray diffraction analysis showed the incorporation of Sn and that the Ge1-xSnx films are fully epitaxial and strain relaxed.Tin incorporation in the Ge matrix was found to vary from 1% to 7%.The scanning electron microscopy images and energy dispersive X-ray spectra maps show uniform Sn incorporation and continuous film growth.Investigation of deposition parameters shows that at high flow rates of stannic chloride the films were etched due to the production of HCl.The photoluminescence study shows the reduction of bandgap from 0.8 eV to 0.55 eV as a result of Sn incorporation.

【 授权许可】

Unknown