Low-Temperature Chemical Vapor Deposition of Ruthenium and Manganese Nitride Thin Films

chemical vapor deposition (CVD);ruthenium;manganese nitride;Ru;Mn-N;film deposition

Lazarz, Teresa S.

关键词: chemical vapor deposition (CVD);    ruthenium;    manganese nitride;    Ru;    Mn-N;    film deposition;   

Others  :  https://www.ideals.illinois.edu/bitstream/handle/2142/13834/TL_Thesis_Bound.pdf?sequence=2&isAllowed=y

美国|英语

来源: The Illinois Digital Environment for Access to Learning and Scholarship

【 摘 要 】

Materials and thin film processing development has been and remains key to continuing to make ever smaller, or miniaturized, microelectronic devices. In order to continue miniaturization, conformal, low-temperature deposition of new electronic materials is needed. Two techniques capable of conformality have emerged: chemical vapor deposition (CVD) and atomic layer deposition (ALD). Here, two processes for deposition of materials which could be useful in microelectronics, but for which no low-temperature, conformal process has been established as commercializable, are presented. One is ruthenium, intended for use in interconnects and in dynamic random access memory electrodes, a known material for use in microelectronics but for which a more conformal, yet fast process than previously demonstrated is required. The other is manganese nitride, which could be used as active magnetic layers in devices or as a dopant in materials for spintronics, which is not yet established as a desired material in part due to the lack of any previously known CVD or ALD process for deposition.